advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 30v fast switching characteristic r ds(on) 18m small size & lower profile i d 9a halogen free & rohs compliant product description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 52 /w data and specifications subject to change without notice parameter drain-source voltage gate-source voltage operating junction temperature range 201503171 30 + 20 2.4 -55 to 150 1 7.2 40 parameter thermal data -55 to 150 total power dissipation 3 9 storage temperature range drain current 3 @ v gs =10v drain current 3 @ v gs =10v pulsed drain current 1 AP4800N2 rating halogen-free product ap4800 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. dfn 2x2 d d g d d s dd g s d d ds top view s g d .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =9a - 14 18 m v gs =4.5v, i d =5a - 20 30 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 1.5 3 v g fs forward transconductance v ds =10v, i d =9a - 24 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 30 ua q g total gate charge i d =5a - 7 11.2 nc q gs gate-source charge v ds =15v - 1.8 - nc q gd gate-drain ("miller") charge v gs =4.5v - 3 - nc t d(on) turn-on delay time v ds =15v - 5 - ns t r rise time i d =1a - 19 - ns t d(off) turn-off delay time r g =3.3 -15- ns t f fall time v gs =10v - 19 - ns c iss input capacitance v gs =0v - 800 1280 pf c oss output capacitance v ds =15v - 105 - pf c rss reverse transfer capacitance f=1.0mhz - 75 - pf r g gate resistance f=1.0mhz - 1.3 2.6 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =2a, v gs =0v - - 1.2 v t rr reverse recovery time i s =9a, v gs =0 v , - 13 - ns q rr reverse recovery charge di/dt=100a/s - 5 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3.surface mounted on 1 in 2 2oz copper pad of fr4 board, t < 10s ; 250 o c/w when mounted on min. copper pad. 2 AP4800N2 .
AP4800N2 fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 50 60 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0 10 20 30 40 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 12 14 16 18 20 22 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =5a t a =25 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =9a v g =10v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d =250ua .
AP4800N2 fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. drain current v.s. ambient temperature 4 0 2 4 6 8 024681012 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =5a v ds =15v 0 400 800 1200 1600 1 5 9 13 17 21 25 29 33 37 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 250 /w t t 0.02 operation in this area limited by r ds(on) 0 10 20 30 40 0123456 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0 2 4 6 8 10 12 25 50 75 100 125 150 t a , ambient temperature ( o c ) i d , drain current (a) t j = -55 o c .
ap4800n 2 fig 13. normalized bv dss v.s. junction fig 14. total power dissipation temperature fig 15. typ. drain-source on state resistance 5 0 0.8 1.6 2.4 3.2 0 50 100 150 t a , ambient temperature( o c) p d , power dissipation(w) 0 0.4 0.8 1.2 1.6 2 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss i d =1ma 0 10 20 30 40 50 0 4 8 12 16 20 24 i d , drain current (a) r ds(on) (m ) t j =25 o c 4.5v 5.0v v gs =10v .
AP4800N2 marking information 6 4800 ywws part number : 4800 date code (ywws) y last digit of the year ww week s sequence .
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